摘要
采用多层膜结构制备了金属基Pt/ITO薄膜热电偶,薄膜热电偶由Ni基合金基片、NiCrAlY过渡层、热生长Al_2O_3层、Al_2O_3绝缘层、Pt/ITO功能层和Al_2O_3保护层构成。静态标定结果表明:样品的平均塞贝克系数为107.45μV/℃。测试温度可达到1000℃。时效处理可以有效提高薄膜热电偶的输出热电势。
The Pt/ITO thin-film thermocouples with multilayer structure are fabricated on metal substrates.The thin-film thermocouple is composed of Ni-base alloy substrate,NiCrAlY buffer layer,thermal growth Al_2O_3 layer, Al_2O_3 insulating layer,Pt/ITO function layer and Al_2O_3 protective layer.The results of the static calibration of the sample show that the average Seebeck coefficient is about 107.45μV /℃.The test temperature can be up to 1000℃.The thermoelectric power of the sample can be effectively improved by aging treatment.
出处
《测控技术》
CSCD
北大核心
2013年第4期23-25,共3页
Measurement & Control Technology
基金
国防预研基金资助项目(51312050405)
关键词
PT
ITO薄膜热电偶
静态标定
热电势
塞贝克系数
Pt/ITO thin-film thermocouples
static calibration
thermoelectric power
Seebeck coefficient
