基于P3HT:PCBM体异质结的正置和倒置太阳能电池性能的数值研究

Optical Simulation Based on P3HT:PCBM Bulk-Heterojunction Solar Cells:a Comparison of Normal and Inverted Structures of Device

采用基于传输矩阵法的光学模型模拟活性层为P3HT:PCBM的太阳能电池,研究了器件结构以及活性层厚度对其光学性能的影响,并分析了相关原因。研究结果表明短路电流密度随活性层厚度增加而增大,倒置结构器件性能优于正置结构器件。由于光的干涉作用,结构不同的器件中光电场强度呈现不同的分布,对于器件性能有很大的影响。通过计算得出了两种结构中短路电流密度随活性层厚度的变化规律,优化了器件的结构。计算结果表明当器件为倒置结构,且活性层厚度为225nm时,器件性能最优,此时短路电流密度为15.5mA/cm2,效率为5.77%。

Optical model based on transfer matrix method is employed to investigate the effects of active layer thickness and the configuration on the performance of organic solar cells based on P3HT.＂ PCBM. Simulation result reveals that short circuit current density increases with active layer thickness and performance of inverted structure device is superior to normal one. Interference effect has a great influence on optical electric-field strength distribution and the device performance. The short-circuit current density and optical electronic field distribution in two structures of the device are calculated to decide the optimal device configuration. It is found that the inverted organic solar cell device with 225 nm thick P3HT PCBM shows the highest performance allowing achievement of short-circuit current density for 15.5 mA/cm2 , efficiency for 5.77 %.