期刊文献+

Influence of nanomechanical force on the electronic structure of InAs/GaAs quantum dots

Influence of nanomechanical force on the electronic structure of InAs/GaAs quantum dots
下载PDF
导出
摘要 We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots (QDs). The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs(001) quantum dots with vertical nanomechanical force are investigated. Both the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proven to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots. We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots (QDs). The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs(001) quantum dots with vertical nanomechanical force are investigated. Both the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proven to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第4期438-442,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201) the Fundamental Research Funds for the Central Universities (Grant No. 2011RC0402) the Program for New Century Excellent Talents in University (Grant No. NCET-10-0261)
关键词 nanomechanical force quantum dots energy levels electronic structure nanomechanical force quantum dots energy levels electronic structure
  • 相关文献

参考文献29

  • 1ArakawaY and Sakaki H 2002 Appl. Phys. Lett. 40 939.
  • 2Padiha L A, Neves A R, Rodriguez E, Cesar C L, Barbosa L C and Brito Cruz C H 2005 Appl. Phys. Lett. 86 161111.
  • 3Sugawara M, Ebe H, Hatori N and Ishida M 2004 Phys. Rev. B 69 35332.
  • 4Stevenson1 R M, Young R J, See1 P, Gevaux D G, Cooper K, Atkinson P, Farrer I, Ritchie D A and Shields A J 2006 Phys. Rev. B 73 033306.
  • 5Kowalik1 K, Krebs O, Lemahitre A, Laurent S, Senellart P, Voisin P and Gaj J A 2005 Appl. Phys. Lett. 86 041907.
  • 6Gerardot B D, Seidl S, Dalgarno P A, Warburton R J, Granados D, Garcia J M, Kowalik K, Krebs O, Karrai K, Badolato A and Petroff P M 2007 Appl. Phys. Lett. 90 041101.
  • 7Reimer1 M E, Korkusińskil M, Dalacu1 D, Lefebvre1 J, Lapointe1 J, Poole1 P J, Aers1 G C, McKinnon1 W R, Hawrylak P and Williams R L 2008 Phys. Rev. B 78 195301.
  • 8Muller A, Fang W, Lawall J and Solomon G S 2008 Phys. Rev. Lett. 101 027401.
  • 9Nakaoka T, Kakitsuka T, Saito T, Kako1 S, Ishida1 S, Nishioka1 M, Yoshikuni Y and Arakawa1 Y 2003 J. Appl. Phys. 94 6812.
  • 10Gell J R, Ward M B, Young R J, Stevenson R M, Atkinson P, Anderson D, Jones G A C, Ritchie D A and Shields A J 2008 Appl. Phys. Lett. 93 081115.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部