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聚噻吩衍生物的合成及光电性质研究 被引量：2

Preparation and photoelectronic properties of polythiophenes
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摘要 通过化学氧化聚合法合成了3种聚噻吩衍生物,并通过测定紫外-可见吸收光谱、荧光光谱、光致发光光谱以及循环伏安曲线对3种聚合物的光电性质进行了表征,确定其光学性质、带隙及HOMO/LUMO轨道能量.结果表明,在噻吩环3-位引入长链取代基可提高聚合物最大吸收波长λmax,降低聚合物带隙. Three kinds of polythiophenes are prepared by chemical oxidative polymerization. The UV-Vis spectra, fluorescence spectra, PL and CV spectra of the three polymers have been determined, the photoelectric properties, band gag and HOMO/LUMO orbital energy of them are investigated. It is concluded that a long chain alkyl group at 3 - position of thiophene ring can effectively increase λmax and decrease band gap of polythiophene.
作者 乌海燕 刘福德 王娟 周勇
机构地区 天津理工大学化学化工学院
出处 《天津工业大学学报》 CAS 北大核心 2013年第2期54-56,共3页 Journal of Tiangong University
基金 国家自然科学基金资助项目(21176193)
关键词 聚噻吩 光电性质 禁带宽度 化学氧化法 polythiophene photoelectronic properties band gap chemical oxidation
分类号 TQ031.2 [化学工程]
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参考文献10

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共引文献7

同被引文献43

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天津工业大学学报
2013年 第2期

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