常压烧结法制备ZAO靶材及其性质研究

Preparation of ZAO Ceramic Target Sintered at Ambient Pressure and Its Properties

铝掺杂氧化锌(ZAO)透明导电膜兼具电阻率低和透光性好的特点,在光学与光电子领域具有广阔的应用前景。本文以微米级的高纯超细ZnO和Al2O3粉体为原料,通过控制适当的素坯成型压力,烧结前增加冷等静压环节,优化烧结工艺,制备出了高致密度和低电阻率的ZAO靶材。在16 MPa的成型压力,120 MPa冷等静压,1350℃×1 h的烧结工艺下,制备出了高致密度和低电阻率的ZAO靶材,其致密度达98.0%,电阻率为1.8×10-2Ω.cm,接近于热等静压所制备出的ZAO靶材。利用自制靶材,通过射频磁控溅射法,进一步制备出了ZAO薄膜,透光率达到88.6%,最低电阻率达到2.1×10-3Ω.cm。

Alumina-doped zinc oxide （ZAO） thin films show good transparent and conductive properties, which have prospective application in photonics and optoelectronics. In this paper, we choose high pure and fine ZnO and Al2O3 powder in micrometer-level as raw material, by controlling the pressure properly during mold formation, adding cold isostatic pressing to greenbody, optimizing the sinter process parameters, some high quality ZAO sputtering targets are obtained. When the ZAO oxides are pressured at 16 MPa, and then sintered at 1350 ℃ × 1 h, the density of the ZAO is up to 98% and the resistivity is 1.8×10^-2Ω·cm, which is close to the ZAO target prepared by heat isostatic pressing. The ZAO thin films are deposited on glass sheet by using radio frequency （RF） magnetron sputtering based on the present ZAO target. The optical transmission is 88.6% in the visible light spectrum, and the minimum resistivity of the thin film is 2.1 ×10^-3Ω·cm.