准分子激光诱导非晶硅晶化制备多晶硅薄膜晶体管

Polycrystalline Silicon Thin Film Transistor Fabricated by Excimer Laser Crysta llization of Amorphous Silicon

讨论了用准分子激光诱导非晶硅晶化法制备多晶硅薄膜晶体管的结构与工艺优化问题。用 Xe Cl准分子激光器对 PECVD法生长的非晶硅薄膜进行了诱导晶化处理 ,成功制备了多晶硅薄膜晶体管 ,获得最大场效应迁移率为 1 4.5cm2 /V· s,亚阈值斜率为 1 .9V/dec,开关电流比为 1 .0× 1 0 6的器件性能。

The optimization of the structure of a polycrystalline silicon thin film transis tor by excimer laser crystallization of amorphous silicon and its fabrication pr ocess have been discussed By using XeCl excimer laser, crystallization of PEC VD amorphous silicon is made, with which a polycrystalline silicon thin film tr ansistor has been successfully fabricated The transistor has a maximum field e ffect mobility of 14 5 cm 2/V·s, a subthreshold slope of 1 9 V/dec and an on/off current ratio of 1 0×10 6