摘要
报道了用氦离子注入智能剥离形成SOI结构硅片的新技术，介绍了这种技术的工艺和用剖面透射电镜研究的结果。氦离子用等离子体浸没离子注入技术注入硅片中。
A new technology of smart cut using helium ion implantation to form SOI was presented.The process of smart cut was introduced and research results was demonstrated by means of XTEM in this paper. Helium ion was implanted by plasma immersion ion implantation technology.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第5期22-24,共3页
Semiconductor Technology
关键词
智能剥离
等离子体
浸没
离子注入
SOI SIMOX Wafer bonding Smart cut Top silicon Buried SiO_2
