摘要
通过确定 CMOS逻辑器件的各种参数与馈通电流和容性负载充放电电流的定量关系 ,得出设计 CMOS逻辑器件的各种参数以减小ΔI噪声 ,从电磁兼容的角度提出了设计 CMOS器件的方法。
The quantitative relation between the parameters of CMOS and the two currents is determined by calculation. Then the design of CMOS to reduce Delta I noise is achieved in the point of view of Electromagnetic Compatibility.
出处
《电波科学学报》
EI
CSCD
2000年第3期282-288,共7页
Chinese Journal of Radio Science
关键词
CMOS
△I噪声
充放电电流
逻辑器件
CMOS
delta-I noise
feedthrough current
charging/discharging current of the capacitance load
