摘要
采用脉冲激光沉积(PLD)法在蓝宝石衬底上先后外延生长了ZnO:Al(ZAO)和LiNbO3(LN)薄膜。通过X射线衍射分析(XRD)可知二者之间的外延关系为:LN(001)//ZAO(001)、LN[110]//ZAO[110]、LN[100]//ZAO[120]。制备了Au/LN/ZAO和ZAO/LN/ZAO两种电容器结构,对其进行了电流-电压(J-E)测试和铁电(P-E)分析,结果表明:LN/ZAO集成结构具有整流作用,ZAO/LN/ZAO结构表现出较好的绝缘性能,所制备的LN薄膜在室温下的剩余极化强度(Pr)约为1×10–6C/cm2,温度的升高能够促进电畴的翻转,使Pr增加为3×10–6C/cm2。
The ZnO：Al （ZAO） and LiNbO3 （LN） thin films were epitaxially deposited on sapphire substrate by pulsed laser deposition （PLD）. Through X-ray diffraction analysis （XRD）, It is obtained that the epitaxial relationship of the two films is： LN（001）//ZAO（001）, LN[1^-10]//ZAO[110], LN[100]//ZAO[1^-20].-Different top electrodes, Au and ZAO, were prepared on the LN film respectively, then the conduction （J-E） and ferroelectric properties （P-E） of the LN film were studied. The results show that LN/ZAO integrated structure has a rectifying effect, and good insulating properties are exhibited in ZAO/LN/ZAO structure. Moreover, it is showed that the remanent polarization （Pr） of LN film deposited on ZAO is about 1×10^-6C/cm^2 at room temperature. The ferroelectric domain switching of the LN film is enhanced with increasing of the measured temperature, so that the Pr increases to 3× 10^-6C/cm^2 at 300 ℃.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2013年第5期9-12,共4页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.50932002)
