大功率量子阱远结半导体激光器

High-power SQW Remote Junction Semiconductor Lasers

通过将下波导层掺杂为p型 ,使半导体激光器的有源区与pn结分离 ,制作了大功率远结半导体激光器。该器件在老化期间表现出输出功率变大的趋势。理论分析表明 ,远结半导体激光器特殊的外延结构 ,决定了器件的阈值比正常器件的高 ,但是阈值受温度的影响较小 ,并且器件的退化机制转变为pn结的退化 ,这对于制作高可靠性、长寿命、低温度敏感性的半导体激光器具有重要意义。

High-power SQW remote junction lasers are made by means of doping the lower optical guiding layer with p-type dopant. In this structure, th e active layer is separated from the pn junction. The remote junction lasers t end to increase output power during the aging process. Theoretical analysis shows that the higher threshold current and the reduced temperature dep endence of threshold current are determined by the special epitaxial structure o f the devices. Furthermore, the degradation of the remote junction lasers is dep endent on the degradation of the pn junction. These properties are of great s ignificance in fabrication of highly reliable, long lifetime semiconduc tor lasers with low temperature sensitivity.