摘要
提出了一种用于测量入射激光波长的新方法。根据InGaAs、Si双光电探测器的不同光谱响应特性 ,综合测定入射激光波长。与通常的F -P腔等测波长的方法相比 ,该方法不受入射激光方向变化的影响 ,而且速度快 ,设备简单。
A new method for incident laser wavelength measurement is presented. Based on the different spectral response of dual photodetectors(InGs and Si), the incident light wavelength can be determined. Compared with usual way to meas ure wavelength, such as F-P cavity, it is independent on the direction of incident laser beam,and is characterized by short response and simple constructu re.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第5期363-365,共3页
Semiconductor Optoelectronics
