工艺参数对电感耦合等离子体刻蚀ZnS速率及表面粗糙度的影响

Influence of Process Parameters of ZnS Etched by Inductively Coupled Plasma on the Rate and Surface Roughness

为了得到电感耦合等离子体反应刻蚀ZnS的工艺参数,采用CH4∶H2∶Ar(1∶7∶5)作为刻蚀气体,在ZnS刻蚀机理的基础上,分析各工艺因素对ZnS刻蚀速率和刻蚀后表面粗糙度的影响.实验结果表明:当气体总流量39sccm、偏压功率80W、射频功率300W时,ZnS刻蚀速率为18.5nm/min,表面粗糙度Ra小于6.3nm,刻蚀后表面沉积物相对较少;Ar含量变化对刻蚀速率和表面粗糙度影响较大.给出了刻蚀速率和表面粗糙度随气体总流量、Ar含量、偏压功率和射频功率的变化趋势.

In order to obtain the etching parameters of ZnS by inductively coupled plasma,the etching was performed by a gas mixture of CH4 ＂ H2 ＂ Ar（1 ~ 7 ＂ 5）. The influence of the various parameters on the etching rate and surface roughness is analyzed based on the etching mechanism of ZnS. The experimental result indicates that the substrate surface is relatively small, and the minimum surface roughness Ra is 6. 3nm when the total flow is 39sccm, the bias power is 80W, the RF power is 300W and the etching rate of ZnS is 18. 5nm/min. It is found that the main influence is Ar content. The paper gives the changing trends of etching rate and surface roughness with the total flow, Ar content, bias power and RF power.