离散谱折射率法分析深刻蚀、单模GaAs/GaAlAs脊形光波导

ANALYSIS OF DEEP ETCHED,SINGLE-MODE GaAs/GaAlAs OPTICAL RIB WAVEGUIDES USING DISCRETE SPECTRAL INDEX METHOD

本文采用离散谱折射率法对深蚀刻、Ga As/ Ga Al As多层脊形光波导模式特性进行了具体分析和设计 ,获得了较大截面、低损耗的单模脊形光波导 .利用这种横向具有最大折射率差的深蚀刻脊形光波导不但可以提高多模干涉 (MMI)型器件的性能 ,而且在设计和制作弯曲波导、分支结构时 ,具有结构紧凑。

In this paper it is presented a detailed theoretical study of the properties of deep etched GaAs/GaAlAs multiple layer optical rib waveguides designed using the discretes spectral index method.At last,it is obtained low loss,single mode optical rib waveguides with a large mode size.Using this kind of deep etched rib waveguides with biggest lateral index difference,can raise the performances of MMI devices but also when designing and fabricating bend waveguides and branch structures,it has the advantages of compactness and easy to integration.