基于InP衬底的晶格失配In_(0.68)Ga_(0.32)As的MOCVD生长及其特性研究

Characterization of the lattice mismatched In_(0.68) Ga_(0.32) As Material Grown on InP substrate by MOCVD

采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3μm In0.68Ga0.32As薄膜生长.通过As组分的改变,利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力,在InP衬底上得到了与In0.68Ga0.32As晶格匹配的InAsxP1-x'虚拟'衬底,通过对缓冲层厚度的优化,使应力能够在'虚拟'衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明,这种释放应力的方法能够有效提高In0.68Ga0.32As外延层的晶体质量.

The lattice mismatched In0.68 Ga0.32 As materials were grown on InP substrate by MOCVD technology. In- ASxPt^x metamorphic buffer layer structures with various As compositions were grown on InP substrates, which forms an alternative tension and strain offset buffer structure , In this way, we got a strain relaxed InAsxP1-x＂ virtual＂ substrate, which is lattice matched to I%.68 Gao.32 As . With an optimized thickness of the buffer layer,the strain was completely relaxed in the ＂virtual＂ substrate. The analysis of AFM, HRXRD , TEM and photoluminescence （PL） indicated that this method can effectively improve the quality of the In0.68Ga0.32As material.