La掺杂对PZT薄膜光伏特性的影响

The influence of La content on photovoltaic effect of PZT thin films

采用溶胶-凝胶法在LNO/Si衬底上制备了(Pb1-xLax)(Zr0.52Ti0.48)1-x/4O3(PLZT)多晶薄膜.XRD图谱显示,通过600℃的快速热退火过程制备出了同时具有三方相和四方相的PLZT薄膜,并且薄膜呈现(110)晶向择优生长;拉曼图谱进一步证实了薄膜同时具有三方相和四方相;研究样品的电滞回线发现,随着La含量的减小,薄膜的电滞回线不断宽化;同时,通过光伏效应测试得出结论,当La含量从1%增加到6%时,光生电压逐渐增大,并在6%时达到极大值,当La含量进一步增加时,光生电压反而随之减小.

The polycrystalline thin films of （Pb1-xLax）（Zr0.52Ti0.48）1-x/4O3（PLZT） were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential （110） orientation can be obtained after a rapid thermal annealing process at 600 ℃. This is further confirmed by Raman spectrum. With the decrease of La content, hysteresis loops of the thin films gradually broaden. Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1% to 6%. It reaches a maximum there and then decreases when the La content is increased furthermore.