MBE生长的PIN结构碲镉汞红外雪崩光电二极管

MBE growth HgCdTe avalanche photodiode based on PIN structure

对中波红外碲镉汞雪崩光电二极管(APD)特性进行理论计算,获得材料的能量散射因子及电离阈值能级与材料特性的相互关系,从而计算器件的理论雪崩增益与击穿电压.通过对材料特性(组分,外延厚度,掺杂浓度等)的优化,设计并生长了适合制备PIN结构红外雪崩光电二极管的碲镉汞材料,并进行了器件验证.结果显示,在10 V反偏电压下,该器件电流增益可达335.

Hg1-xCdxTe （x = 0.3 ） avalanche photodiodes （APDs） with a PIN structure was investigated theoretically. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. The gain as well as the breakdown voltage of the device was obtained. The composition, thickness, doping level were optimized theoretically for the APD device. A high performance APD device with a gain of 335 at the bias voltage of-10V was fabricated, which consisted of a PIN structure mad of HgCdTe grown by MBE.