摘要
报道了用离子注入方法和组合技术制备的 Al Ga As/Ga As单量子阱多波长发光集成芯片 ,利用量子阱界面混合原理在同一块 Ga As衬底片上获得了 2 0多个发光波长从 787~ 72 4nm的 Ga As量子阱发光单元 ,研究了不同剂量的 As和 H离子分别单独注入和迭加组合注入对量子阱发光峰位的影响 ,采用了组合技术和离子注入技术大大简化了制备工艺过程 ,这种发光芯片对于波分复用器件和建立离子注入数据库等方面都有重要的意义 .
An integrated AlGaAs/GaAs single quantum well multi wavelength light emitting chip fabricated by ion implantation and combined technology was reported. By interface intermixing more than 20 GaAs quantum well light emitting elements whose photoluminescence wavelength ranges from 787 to about 724nm were obtained. The effect of different doses of As + and H + and their combination on the shift of the photoluminescence wavelength of the quantum well was studied. With ion implantation and combined method the fabrication processes were drastically simplified. Such a kind of multi wavelength light emitting chip has great potentiality both on the application of wavelength division multiplexing (WDM), in which many lasers with different wavelengths are required and on the setting up of a database for optimizing the ion implantation processes.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第3期181-184,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金!(编号 696760 1 4 )
上海市启明星计划!(编号98QA1 4 0 0 4 )资助项目&&
关键词
砷化镓
多波长发光芯片
量子阱
离子注入
GaAs quantum well, ion implantation, interface intermixing, photoluminescence.