n-HgCdTe光导器件的两种表面钝化研究

THE STUDY OF TWO KINDS OF SURFACE PASSIVATION WAYS FOR n-HgCdTe PHOTOCONDUCTOR DEVICE

利用 Ar+束溅射沉积技术实现了 Cd Te薄膜的低温生长 ,利用电化学方法进行了 Hg Cd Te表面自身阳极氧化膜的生长 ,利用生长的 Cd Te介质膜和 Hg Cd Te表面自身阳极氧化膜对 n- Hg Cd Te光导器件进行了表面钝化 .对两种器件的电阻、各项性能指标进行了测量分析 ,实验表明得到的 Cd Te/ Hg Cd Te界面质量已达到器件实用化水平 .

The CdTe film was deposited at low temperature by Ar + beam sputtering deposition technique. The anodic oxide film of the HgCdTe crystal was fabricated by use of electrochemical method. The CdTe film and the anodic oxide film were used for passivation of n HgCdTe photoconductor device. The resistance and the device performance of the two kinds of devices were measured. It was proved that the quality of the CdTe/HgCdTe interface can meet the requirements of the passivation of photovoltaic HgCdTe infrared focal plane arrays.