基于0.13μm CMOS技术的超宽带低噪放大器设计

An UWB Low Noise Amplifier in 0.13 μm CMOS

针对信号频段为3.1～10.6GHz的超宽带系统射频前端,提出一种基于0.13μm CMOS技术的低噪声放大器设计与实现.该放大器采用两级结构,通过第一级单端型电阻反馈和第二级单端转差分型电压缓冲器的级联设计,在获得足够的信号功率增益的同时,能够实现超宽带范围内的输入匹配.整体电路仿真结果表明:在3.1～10.6GHz的工作频段,电压增益为23.2dB,输入回波损耗小于-13dB.在6GHz时噪声系数最小值为2.4dB,最大值为2.7dB,输入三阶交调截取点(IIP3)为-11.9dBm.在1.2V电源电压下,该低噪声放大器功耗为12.2mW,芯片面积为0.32mm2.

Aiming at the design of radio frequency（RF） front-end of the ultra-wideband（UWB） system with the signal frequency band of 3.1～10.6 GHz,a low noise amplifier（LNA） based on 0.13 μm CMOS technology was presented.With cascading the first stage with single-ended resistor feedback architecture and the second stage of single-to-differential voltage buffer,the proposed LNA obtained large power gain and simultaneously realized input impedance matching in the whole ultra wideband.The simulation results show a 23.2 dB voltage gain and input return loss below-13 dB from 3.1～10.6 GHz,2.4 dB and 2.7 dB minimum and maximum noise figure（NF）,and-11.9 dBm IIP3 at 6 GHz are achieved.With 1.2 V supply voltage,the wideband LNA consumes 12.2 mW.The silicon area is 0.32 mm2.