三栅FET的总剂量辐射效应研究

Study of Total Dose Radiation Effects on Triple-gate FETs

通过对赝MOS进行不同剂量的辐射,得到不同辐射条件下赝MOS器件的I-V特性曲线,并通过中带电压法进行分析,得出在不同辐射下SOI材料的埋氧层中产生的陷阱电荷密度和界面态电荷密度参数。采用这些参数并结合Altal三维器件模拟软件模拟了硅鳍(FIN)宽度不同的三栅FET器件的总剂量辐射效应,分析陷阱电荷在埋氧层的积累和鳍宽对器件电学特性的影响。

By radiating different amount of radiation to the pseudo-MOS transistor, the cor- responding I-V characteristic curve is obtained. Additionally, the density of interface traps and the density of trapped-oxide charges which origin from the buried oxide layer of the SOI material while under radiation can be obtained using the middle band voltage analyze method. Using these parameters and combining with Altal 3D device simulation software to simulate total dose radia- tion effects of triple-gate FETs under different FIN width and analysis trapped-oxide charges in buried oxygen layer accumulation and influence of FIN width to the device electrical characteristic.