期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

二苯磷酰基取代四苯基硅的合成及在构筑宽禁带聚合物中的应用

The synthesis of phosphonate-functionalized tetraphenylsilane unit and its application in wide band-gap polymer materials
原文传递
导出
摘要 设计并合成了二苯磷酰基取代的四苯基硅基团,并将其作为宽禁带聚合物母体材料构筑基元,通过Suzuki反应偶连3,6位取代的咔唑合成了聚合物SiCzP.对聚合物的结构进行了系统的表征.与模型聚合物SiCz相比,二苯磷酰基的强吸电子能力,降低聚合物母体材料的LUMO能级,更有利于电子的注入.SiCzP与SiCz的玻璃化转变温度分别为219与227℃,失重5%时的分解温度分别为441与426℃.二者均具有良好的成膜性,掺杂器件初步结果表明,二苯磷酰基的引入使器件的亮度和效率都得到提高,其最大流明效率和功率效率比SiCz分别提高了98%和75%. Phosphonate-functionalized tetraphenylsilane group was designed and synthesized. Coupling with 3,6-substituted carbazole, wide band-gap polymer host SiCzP was synthesized through Suziki reation by using above designed group as fundamental unit. The structure were systematically characterized. Compared with model polymer SiCz, the strong electron-withdrawing property of phosphonate unit could decrease the LUMO energy level and facilitate electron injection. The glass transition temperature and decompostion temperature of SiCzP and SiCz were 219 and 227, 441 and 426℃, respectively. Both compounds had good film stability. The brightness and efficiency of doped devices were both increased by the introduction of phosphonate unit and the maximun current efficiency and power efficiency were imporved by 98% and 75%, respectively.
作者 王储 刘贺 胡德华 路萍 马於光
机构地区 吉林大学超分子结构与材料国家重点实验室
出处 《中国科学：化学》 CAS CSCD 北大核心 2013年第4期457-464,共8页 SCIENTIA SINICA Chimica
基金 国家自然科学基金(21174050) 教育部基金(2009CB623605)资助
关键词 宽禁带 聚合物 母体材料 SUZUKI反应 wide band-gap, polymer, host materials, Suzuki reaction
分类号 O631.3 [理学—高分子化学]
  • 相关文献

参考文献17

  • 1Ma YG, Zhang HY, Shen JC, Che CM. Electroluminescence from triplet metal-ligand charge-transfer excited state of transition metal complexes. Synth Met, 1998, 94:245-248.
  • 2Baldo MA, O'Brien DF, You Y, Shoustikov A, Sibley S, Thompson ME, Forrest SR. Highly efficient phosphorescent emission from organic electroluminescent devices. Nature, 1998,395:151-154.
  • 3Kawamuray Y, Goushi K, Brooks J, Brown JJ, Sasabe H, Adachi C. 100% phosphorescence quantum efficiency of Ir(III) complexes in organic semiconductor films. Appl Phys Lett, 2005, 86:071104-071107.
  • 4Lamansky S, Djurovich P, Murphy D, Abdel-Razzag F, Lee HE, Adachi C, Burrows PE, Forrest SR, Thompson ME. Highly phosphorescent bis-cyclometalated iridium complexes: Synthesis, photophysical characterization, and use in organic light emitting diodes. J Am Chem Soc, 2001, 123:4304-4312.
  • 5Baldom A, O'Brien DF, Thompson ME, Forrest SR. Excitonic singlet-triplet ratio in a semiconducting organic thin film. Phys Rev B, 1999, 60:14422-14428.
  • 6Hu DH, Cheng G, Lu P, Liu H, Shen FZ, Li FH, Lv Y, Dong WY, Ma YG. Peripheral cyanohexyl substituent in wide bandgap polymer: increase the electron injection property for blue phosphorescence light emitting device. Macromolecular Rapid Communications, 2011, 32: 1467-1471.
  • 7Hu DH, Shen FZ, Liu H, Lu P, Lv Y, Liu DD, Ma YG. Separation of electrical and optical energy gaps for constructing bipolar organicwide bandgap materials. Chem Commun, 2012, 48:3015-3017.
  • 8Hu DH, Lu P, Wang CL, Liu H, Wang H, Wang ZM, Fei T, Gu X, Ma YG. Silane coupling di-carbazoles with high triplet energy as host materials for highly efficient blue phosphorescent devices. J Mater Chem, 2009, 19:6143-6148.
  • 9Liu H, Cheng G, Hu DH, Shen FZ, Lv Y, Sun GN, Yang B, Lu P, Ma YG. A highly efficient, blue-phosphorescent device based on a wide-bandgap host/FIrpic: Rational design of the carbazole and phosphine oxide moieties on tetraphenylsilane. Adv Funct Mater, 2012, 22: 2830-2836.
  • 10O'Brien DF, Baldo MA, Thompson ME, Forrest SR. Improved energy transfer in electrophosphorescent devices. Appl Phys Lett, 1999, 74: 442-444.
中国科学：化学
2013年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部