异质结构对半导体激光器输出特性的影响

Effect of Heterostructure on Output Characteristics of Semiconductor Lasers

异质结构是半导体激光器最基本也是最重要的结构。双异质结构实现了光和载流子的完全限制 ,使阈值电流密度大幅度下降。异质结构引进的带隙差可以实现高注入比、进一步降低了阈值电流 ,同时提高了输出功率。分别限制异质结构 ,波导层折射率的变化形式不同 ,直接影响输出光的远场分布。

Heterostructure is the most essential and important structure of semiconductor lasers.Double heterostructure(DH)realizes the complete confinement of carriers and light,decreasing threshold current density substantially. The introduce of band gap discontinuity in heterostructure can obtain high injection ratio, decrease further threshold current and increase the output power.The form of the refractive index variation in waveguide in separate confinement heterostructure (SCH) affects directly the far field distribution of the emission light.