超低导通电阻R_(on)的SiC沟槽器件

SiC Groove Component of R_(on), Ultra-low Resistance

本文介绍了下一代碳化硅(SiC)平面MOSFET、沟槽结构肖特基二极管和沟槽MOSFET器件。首先,开发了SiC平面MOSFET,可以抑制在正向电流通过时引起寄生PN结二极管的劣化;其次,开发了新型沟槽SiC肖特基二极管,与传统SiC二极管相比,在可接受的漏电流条件下,具有更低的正向压降;第三,开发了新型双沟槽结构SiCMOSFET,在保持超低导通电阻的同时,提高了器件的可靠性,其主要原因在于新结构有效降低了槽栅底部的最大电场强度,抑制了栅氧的击穿。

The paper introduces next-generation SiC flat MOSFET, groove-structured Schottky diode and groove MOSFET components. First of all, SiC flat MOSFET is developed, which is capable of restraining the deterioration of parasitic PN diode when forward current passes. Secondly, new-type groove SiC Schottky diode is developed , which, compared with traditional SiC diode, may result in lower forward pressure reduction, under the condition of acceptable leakage current. Thirdly, new-type dual-groove SiC MOSFET is developed, which improves the reliability of components while in the meantime, keeps ultra-low resistance, the main reason of which is that the new structure lowers effectively the most electric field strength over the bottom of groove bars, hence restraining the breakdown of gate oxide.