硅衬底阳极氧化铝膜的荧光发射研究

Study on Photoluminescence from Anodic Alumina Films Formed on Silicon Substrate

报道了用电子束蒸发技术在硅衬底上沉积 ,并于 1 5wt% H2 SO4 ,温度 2 5℃和 4 0 V直流电压条件下阳极氧化铝薄的制备 (膜厚约 4 0 0 nm)。研究了该阳极氧化铝膜的红外吸收光谱 ( FTIR)、光致荧光光谱 ( PL)和荧光激发光谱 ( PLE)。发现其荧光光谱在 2 80～ 50 0 nm范围内由三个主发射带组成 ,其峰值分别位于 3 1 2 nm,3 67nm和 4 49nm。所有这三个 PL带 ,经分析都与阳极氧化铝膜中的氧空位缺陷有关。 3 1 2 nm和 3 67nm的发射带分别来源于与氧空位相关的 F+ ( 1 B→ 1 A)和 F( 3 P→ 1S)中心 ,而 4

Anodic alumina films were prepared by anodization of ~ 400nm thick aluminum films evaporated on silicon substrate using electron beam in 15wt% H2SO4 at 25 0C under a constant DC voltage of 40V. FTIR, PL and PLE measurements were performed on those resulting Si based anodic alumina films based upon which possible origin of the PL was discussed. All three PL peaks were analyzed to be related to oxygen deficient defects emission similar to that in sapphire. Among them two sharp peaks centered at 312 nm, 367 nm were basically attributed to F + and F center emission respectively while the origin for third broad 449 nm peak is still unknown and further detailed work is required.