在硅(001)上预沉积β-SiC定向层后金刚石薄膜的定向生长

HETEROEPITAXIAL DIAMOND GROWTH ON PRE-DEPOSITED β-SiC ORIENTED LAYER ON Si(001) SUBSTRATE 

采用无毒、不易燃的六甲基二硅胺烷和氢气在硅(001)单晶上用施加负偏压处理和化学汽相沉积(CVD)方法预沉积定向的βSiC.傅里叶红外光谱证实βSiC层的存在.微俄歇谱表明在这种方式下,850℃下即生成密集的与硅的三个〈001〉方向平行的碳化硅单晶晶粒.接着用甲烷代替六甲基二硅胺烷作为碳源,在其上继续施加负偏压处理和CVD生长.微俄歇谱表明小正方形渐渐变成大正方形,其成分也从含硅碳变成只含碳.微喇曼谱证实了这一变化过程中的相结构从立方碳化硅变成金刚石.这一生长过程中对应的定向关系为金刚石〈001〉∥βSiC〈001〉∥硅〈001〉.

A thin heteroepitaxial β SiC layer was deposited on Si(001) substrate by negative bias treatment and chemical vapor deposition growth using nontoxic,nonflammable hexamethyl disilazane organic compound as the carbon source.Fourier transform infrared spectrum indicated the existence of β SiC.Then diamond heteroepitaxial growth was performed by using methane as the carbon source.The micro\|Auger spectrum showed there were C and Si on the film surface in the first step and there was only C on the film surface in the second step.Micro\|Raman spectrum proved the phase structure had been changed from SiC to diamond after the second step growth.The orientation relationship was:diamond〈001〉∥β SiC〈001〉∥Si〈001〉.