基于耿氏效应的太赫兹器件的研究进展

Development of terahertz device based on Gunn effect

介绍基于耿氏效应的器件在太赫兹领域的研究,详细地阐述耿氏二级管的原理、工艺流程、关键技术的解决和耿氏二极管频率和功率的提高等。重点介绍耿氏二极管的封装工艺和耿氏二极管腔体的具体结构。系统论述通过制备腔体需要的关键尺寸,如腔体内部尺寸、波导型号,从而提取基波与谐波,并提出其提高频率和功率的途径。

Millimeter and submillimeter wave bears some specific characteristics, and plays very important roles in the terahertz field, especially in national defense, security, imaging, communication. This article describes the Gunn devices in the terahertz field. The principles, the process and key technologies of Gunn diode are described in detail, including material growth, Gunn diode package, and Gunn source cavity design. The package of Gunn diode and the specific structure of Gunn device cavity are highlighted. The critical cavity parameters are changed, such as the internal size of the cavity, the waveguide dimensions and models, in order to extract high-order harmonic. The ways to improve the frequency and output power are presented.