摘要
在建立的理论模型基础之上 ,定量地分析了EL2能级对GaAsMESFET夹断电压的影响 ,指出位于本征费米能级以下的EL2能级是影响GaAsMESFET夹断电压大小的主要因素 ,EL2能级对GaAsMESFET夹断电压的影响程度与EL2能级的缺陷密度呈线性关系。
This paper analyses a model of effect of EL2 level of GaAs MESFETs' pinch-off voltage, find out that the level under the intrinsic Feimi levels are the major factors which effect the GaAs MESFETs' pinch-off voltage, relation between the levels' density and the effect factor(γ) is linear.
基金
国家自然科学基金资助课题
