摘要
比较了双极—MOS功率半导体器件的五种基本构成方式 ;然后介绍该类器件发展的最新动态 ,着重阐述几种最新器件 ;最后分析预测了这类器件发展的方向。
This paper summarizes and compares five basic structures and characteristics of BIMOSFET.The new development on BIMOSFET are introduced and the emphasis on a few of recent BIMOSFET devices is placed. At last the author analysis's and forecasts the development direction of BIMOSFET.
