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Effect of Gate Electric Field on Single Organic Molecular Devices

门电场对有机单分子器件的影响
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摘要 Based on the first-principles computational method and elastic scattering Green's function theory, we have investigated the effect of gate electric field on electronic transport properties of a series of single organic molecular junctions theoretically. The numerical results show that the molecular junctions that have redox centers and relatively large dipole moments parallel gate direction can respond to the gate electric field remarkably. The current-voltage properties of 2,5-dimethyl-thiophene-dithiol present N-channel-metal-oxide-semiconductorlike characteristics. Its distinct current-voltage properties can be understood from the evo- lution of eigenvalues, coupling energies, and atomic charges with gate electric field.
出处 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2013年第2期185-190,I0004,共7页 化学物理学报(英文)
基金 This work was supported by the National Natural Science Foundation of China (No.10804064 and No.10974121).
关键词 Gate electric field Molecular junction Electronic transport property 门电场 分子结 电输运性质
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