PtSi肖特基势垒红外焦平面阵列的市场前景

Market Outlook of PtSi Shottky-barrier IR FPA

本文全面深入地分析了PtSi肖特基势垒红外焦平面阵列技术的市场前景。从制作技术、像元集成度、NETD、光响应均匀性、量子效率、成品率和成本方面把PtSi阵列与InSb和HgCdTe阵列技术作了详细的比较,评述了PtSi阵列技术的发展现状和面临的现实,分析了PtSi阵列技术的应用范围,目前面临的市场状况和可预料的今后时间内PtSi阵列技术的前景。

Here is in detail analyzed the market outlook of PtSi Shottky-barrier infrared focal plane arrays. By comparing fabrication technologies, pixel integration capability, NETD, photo-response non-uniformity, quantum efficiency, yield and produce cost of PtSi IR FPAs with those of the InSb and HgCdTe IR FPAs, reviews the development status, PtSi IR FPAs are faced with the challenge, analyses the application ranges of the PtSi IR FPAs, their current market situation and outlook for the expected time.