摘要
The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved. RTA was carried out at 650℃ and its effect was studied by the comparising the room\|temperature PhotoLuminescence (PL) spectra for the non ion removed (grown without magnets) sample with for the ion removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion removed GaInNAs/GaAs SQW after annealing (compared with those for ion removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ion removed GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect assisted In Ga interdiffusion rather than defect assisted N As interdiffusion.
The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved. RTA was carried out at 650℃ and its effect was studied by the comparising the room\|temperature PhotoLuminescence (PL) spectra for the non ion removed (grown without magnets) sample with for the ion removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion removed GaInNAs/GaAs SQW after annealing (compared with those for ion removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ion removed GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect assisted In Ga interdiffusion rather than defect assisted N As interdiffusion.
基金
Project Supported by Major State Basic Research Program Under Grant No.G2 0 0 0 0 3 660 3 and by National NaturalScience Found
关键词
GAINNAS
砷化镓
快速热退火
光学特性
GaInNAs
rapid thermal annealing
photoluminescence
molecular beam epitaxy