摘要
用多触头微波探针 ,对 Ga As单片集成激光器驱动电路芯片进行了在片测试和筛选 ,测得芯片频率响应带宽为 3.8GHz.使用高速增益开关半导体激光器作为采样光脉冲源 ,采用了背面直接采样方式建立了电光采样测试仪 .检测了 Ga As单片集成激光器驱动电路芯片内部点的高速电信号波形 .
The multi\|contact microwave wafer probe has been used for on wafer testing and sifting of GaAs monolithic integrated laser diode driver.Using semiconductor laser, electro\|optic sampling analyzer,with back side probing geometry,is set up.High\|speed electric signals were measured,which are at internal points in the chip of GaAs monolithic integrated laser\|diode driver.
关键词
在片测量
砷化镓
单片集成电路
激光器
驱动电路
electro\|optic sampling
on\|wafer test
monolithic integrated circuit
gain\|switched laser
microwave probe
