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高电源抑制比低温漂带隙基准源设计 被引量：3

A high PSRR and low temperature coefficient bandgap reference
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摘要 设计并实现了一种新的高PSRR、低TC带隙基准源。重点研究了带隙基准源电源抑制能力，尤其是高频PSRR，达到宽频带范围PSRR高性能指标。采用0．35μm BiCMOS工艺进行仿真，结果表明，PSRR在1Hz频率下达-108．5dB，在15MHz频率下达-58．9dB；采用二次温漂补偿电路使得带隙基准源常温下输出参考电压1．183V，在-40℃-95℃温度范围内，温漂系数低达1．5ppm／℃。 A new BGR circuit with high PSRR and low TC is proposed. The PSRR performance of BGR is discussed in detail, especially at high frequency. Then, a high PSRR over a wide frequency range is achieved. The circuit is fabricated in 0.35 μm BiCMOS process. Simulation results show that the PSRR is -108.5 dB at 1 Hz, and -58.9 dB at 15 MHz. A second order curvature compensated circuit is designed. The temperature coefficient is as low as 1.5 ppm/℃ over a temperature range -40 ℃ to 95 ℃.
作者 朱龙飞 莫太山 叶甜春
机构地区 中国科学院微电子研究所
出处 《电子技术应用》 北大核心 2013年第5期35-37,40,共4页 Application of Electronic Technique
关键词 带隙基准 电源抑制比 二次温漂补偿 bandgap reference PSRR second order curvature compensated
分类号 TN433 [电子电信—微电子学与固体电子学]
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参考文献12

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同被引文献23

  • 1全会阁,刘宏立,童调生.2.4G直接下变频接收机射频前端的设计与研究[J].微计算机信息,2006,22(12Z):118-120. 被引量：4
  • 2RAZAVIB.模拟CMOS集成电路设计[M].陈贵灿,程军,译.西安:西安交通大学出版社,2002:319-320.
  • 3中国卫星导航系统管理办公室.北斗卫星导航系统空间信号接口控制文件公开服务信号B1Ⅰ(1.O版)[Z],2012.
  • 4WANG Q,SOMA M.RF front-end system gain and linearity built-in test[C].VLSI Test Symposium,Proceedings,24th IEEE, 2006 : 228-233.
  • 5池保勇.模拟集成电路设计[M].北京:清华大学出版社,2009.
  • 6Shu Jun,Cai Min.A low supply dependence fully-MOSFET voltage reference for low voltage and low power[C].Pro- ceeding of IEEE Asia Pacific Conference on Circuits and Systems, Guangzhou, 2008 : 442-445.
  • 7Zhou Zekun,Zhu Peisheng, Shi Yue, et al.A CMOS voltage reference based on mutual compensation of Vtn and Vtp[J]IEEE Trans.-Cir.Syst. 11 : ExPress Briefs, 2012,59(16) : 341-345.
  • 8Zhou Zekun,Zhu Peisheng A resistorless CMOS voltage reference based on mutual vompensation of VT and VTH[J].IEEE Trans .Cine,Syst Ⅱ:EExpress Briefs, 2013 , 60(9) : 582- 586.
  • 9ANVESHA A,BAGHINI M S.A.sub-Ⅳ 32hA processohage and temperature[C],2013 26th International Confer- ence on VLSI Design :Concurrently vith the 12lh lnlerna- tional Conference on Embedded Svslenls Design, Pune, India 2013: 136-141.
  • 10魏延存,陈莹梅,胡正飞.模拟CMOS集成电路设计[M].北京:清华大学出版社,2010.

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电子技术应用
2013年 第5期

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