单电源低电压InGaP/InGaAs PHEMT低噪声单片放大器

InGaP/InGaAs PHEMT LNA with low voltage single power supply

制备了增强型InGaP/InGaAsPHEMT器件结构、阈值控制以及单电源低电压低噪声单片放大器。获得了阈值电压接近0V的增强型InGaP/InGaAsPHEMT器件，并在此基础上设计制作了可在1.5～3V低电压和单电源下工作的2.5GHz低噪声单片放大器。同时对该电路性能的进一步提高进行了模拟分析。

An enhanced InGaP/InGaAs PHEMT and a LNA, which can operate under a single power supply of 1.5～ 3V is presented in this paper. The device has the threshold voltage near 0 V. The LNA can work at 2.5GHz with a gain of over 20dB and Nf of 3.43dB. The analysis shows that it is important to reduce the parasitic resistance of the inductor in the LNA input circuit for reducing the noise figure Nf further.