摘要
叙述了AlGaN/GaNHEMT的特点及制造工艺，给出其测试结果，最大跨导～157ms/mm,由S参数测量推出器件的截止频率fT和最高振荡频率fmax分别为12GHz和24GHz。
The characteristics and fabrication techniques are reported.The peak DC transconductance of about 157 ms/mm is obtained with HP4155A . On－ wafer measurements by HP8510B network analyzer show an extrapolated fT of 12GHz and fmax of 24GHz.
出处
《功能材料与器件学报》
CAS
CSCD
2000年第3期170-173,共4页
Journal of Functional Materials and Devices
