WN/W难熔栅自对准增强型n沟道HFET

WN/W anisotype－gate self－aligned process for n－channel HFET

发展了WN/W难熔栅自对准工艺。WN/W栅在850oC下退火，保持了较好的形貌。在此工艺基础上研制出了适用于互补逻辑电路的增强型n沟道异质结场效应晶体管。在1×50μm的HFET中，实现了最大跨导约为56mS/mm，阈值电压为3.5V。与p型HFET的－3V的阈值基本对称。反向击穿电压为4～5V。

A WN/W anisotype－ gate self－ aligned HFET process was developed for CHFETs.The ohmic contact for source and drain was achieved by Si＋ implantation and following rapid anealing at 850oC.Using this process,we fabricated enchanced n channel HFET.Typical transconductance is 56mS/mm ,and reverse breakdown voltage 4～ 5V with 1μ m gate length.