深亚微米栅HFET器件工艺研究

Process research of deep submicron gate－length HFET

通过电子束和接触式曝光相结合的混合曝光方法，并利用复合胶结构，一次电子束曝光制作出具有T型栅的HFET(HeterojunctionField－EffectTransistor)器件，并对0.1μm栅长HFET器件的整套工艺及器件性能进行了研究。形成了一整套具有新特点的HFET器件制作工艺，获得了良好的器件性能(ft=78GHz;gm=440ms/mm)。

HFET device with T－ shape gate have been developed by the Mixed Lithography- a new lithography method jointed EBL and normal contact lithography. The multilayer resist technique and different developing are used to obtain a T－ shape gate structure. The whole set of processes and device characteristic of 0.1μ m gate－ length HFET have been studied. 440ms/mm gm and 78GHz, ft of HFET have been achieved.