氮化镓基电子与光电子器件

GaN－based electronic and photoelectric devices

GaN具有宽禁带、高击穿电压、异质结沟道中高峰值电子漂移速度和高薄层电子浓度等特点，是大功率和高温半导体器件的理想化合物半导体材料。宽禁带Ⅲ－Ⅴ族化合物半导体的性能和研究进展已经使大功率紫外光/蓝光/绿光光发射二极管走向商业市场，证明InGaAs/GaN/AlGaAs紫罗兰色异质结激光器能够在室温和脉冲或连续波条件下工作，是性能优越的光电器件的理想材料。本文综述了上述研究成果。

The group Ⅲ － nitride materials are ideal for high power and high temperature devices due to their large energy band－ gap, high breakdown voltage, high peak electron velocity and high electron sheet density in channels when used in a heterostructure. Major developments in wide gap Ⅲ － Ⅴ nitride semiconductors have recently led to the commercial production of high－ power UV/Blue/Green light－ emitting diodes and to the demonstration of room－ temperature violet laser light emission in InGaAs/GaN/AlGaAs－ based heterostructures under pulsed and continues－ wave operations. The group Ⅲ － nitride materials are also ideal for photoelectric devices. These results and discussion are described in this paper.