1.3μm InAsP/InGaAsP应变补偿量子阱激光器

GSMBE growth strain compensated 1.3 μm InAsP/InGaAsP lasers

采用气态源分子束外延方法及应变补偿生长工艺生长了InAsP/InGaAsP应变补偿多量子阱激光器材料，采用选择刻蚀和聚酰亚胺隔离工艺制作成了脊波导型1.3μm激光器芯片并对芯片性能进行了统计测量，测量结果表明此种激光器芯片在室温下的阈值电流可小于10mA，在25oC至90oC温度范围内特征温度大于90K，并表现出较好的单纵模特性。

μ m InAsP/InGaAsP strain－ compensated multi－ quantum－ well laser structurehave been grown by using gas source MBE. The material were processed into laser chips by using selective etching and polyimide isolation techniques. The laser chips show threshold current less than 10mA at room temperature, with characteristic temperature great than 90K in 25oC to 90oC temperature range. Fair good single mode lasing characteristics have been observed.