摘要
报道了915~980nm半导体激光器的最新进展,宽条激光器输出功率为0.2~2.0W,最大输出功率大于5W;基横模脊形波导半导体激光器输出功率达400mW,水平和垂直方向远场发射角分别为70和230,组合件输出功率大于150mW。
Current advance of 915- 980nm semiconductor lasers is reported. For broad- area lasers, the output power is in range of 0.2- 2.0W, the highest output power is up to more than 5.0W. For ridge waveguide lasers operating witn funcamental mode, the output power is up to 400mW, the parallel and perpendicular divergences are 7o and 23o, respectively, the output power is more than 150nW for modules.
出处
《功能材料与器件学报》
CAS
CSCD
2000年第3期293-296,共4页
Journal of Functional Materials and Devices