摘要
Selective area growth （SAG） is performed to fabricate monolithically integrated distributed feedback （DFB） laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser array with an average channel spacing of 1.47 nm is demonstrated by a conventional holographic method with constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode suppression ratio （SMSR） are obtained for all DFB lasers in the array.
Selective area growth （SAG） is performed to fabricate monolithically integrated distributed feedback （DFB） laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser array with an average channel spacing of 1.47 nm is demonstrated by a conventional holographic method with constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode suppression ratio （SMSR） are obtained for all DFB lasers in the array.
基金
supported by the National "863" Projectof China (Nos.2011AA010303 and 2012AA012203)
the National Natural Science Foundation of China (Nos.61021003 and 61090392)
the National "973" Program of China (No.2011CB301702)
