摘要
N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion im- plantation and the samples were annealed at 900 ℃. The structural and magnetic properties of the samples have been studied by high-resolution X-ray diffraction （HRXRD）, Raman scattering and with a superconducting quan- tum interference device （SQUID）. No second phase has been observed and implantation induced defects can not be completely removed by rapid thermal annealing. The annealed samples show magnetic anisotropy and clear ferromagnetic behavior at room temperature. P-, u- and n-GaN：Yb samples show an effective magnetic moment of 1.60, 1.24 and 0.59 μB/Yb, respectively.
N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion im- plantation and the samples were annealed at 900 ℃. The structural and magnetic properties of the samples have been studied by high-resolution X-ray diffraction （HRXRD）, Raman scattering and with a superconducting quan- tum interference device （SQUID）. No second phase has been observed and implantation induced defects can not be completely removed by rapid thermal annealing. The annealed samples show magnetic anisotropy and clear ferromagnetic behavior at room temperature. P-, u- and n-GaN：Yb samples show an effective magnetic moment of 1.60, 1.24 and 0.59 μB/Yb, respectively.
基金
supported by the National Natural Science Foundation of China(No.60876004)
