摘要
本文阐述了从最新版本的IBIS(I/OBufferInformationSpecification)建模数据中构造高速数字I/O缓冲器的瞬态行为模型的推导过程 ,获得了建模所需要的充分条件 .与相应的晶体管级模型 (SPICE模型 )相比 ,该方法在获得了更高仿真精度的同时 ,提高了具有大量同步开关器件芯片互连的仿真速度 .采用这些模型有效地分析了多芯片互连非线性电路中的同步开关噪声 。
The derivation procedure in building transient behavioral models of high speed digital I/O buffers from latest version IBIS modeling data is given,and the sufficient condition for modeling is obtained.Compared with the corresponding transistor level models (SPICE models),this IBIS model speeds up the chip simulations including interconnect and a large number of simultaneous switching devices with better accuracy.Finally,the SSN(Simultaneous Switching Noise) in multi chip interconnect nonlinear circuits is analyzed efficiently with this model,verifying the advantage of signal transmission with difference waveforms.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第11期36-38,42,共4页
Acta Electronica Sinica
基金
国家自然科学基金! (No .697760 2 2 )
上海交大大众电脑集团葛守仁教授奖教金