摘要
本文阐述了反应离子刻蚀 (RIE)工艺过程中充电效应产生的机理 ,认为它是由等离子体分布的不均匀性引起的 ,推导了等离子体充电电流的表达式 .
In this paper,the mechanism for charging effect during RIE processing is discussed.It is thought to be caused by plasma nonuniformity,and an expression for plasma charging current is presented.The tunneling current density during plasma charging is calculated by comparing the difference of Q bd before and after plasma charging.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第11期81-83,67,共4页
Acta Electronica Sinica
