实现多晶硅薄膜等离子氢化的新工艺

A Novel Plasma Hydrogenation Technique of Polycrystalline Silicon Thin Films

根据多晶硅薄膜氢化的微观机理 ,提出改进氢化效果的工艺方法 ,在不增加设备投资的情况下 ,采用该方法能够明显提高多晶硅薄膜的氢化效果 ,从而提高薄膜晶体管的性能 ,ION/IOFF从 10 3量级增加到 10 5量级 ,氢化工艺的处理时间也相应缩短。

The plasma hydrogenation mechanism of poly Si thin film was researched and a novel hydrogenation technique of poly Si thin film was proposed. Using this technique, the pronounced effect on the efficiency of hydrogenation of poly Si thin film was obtained and the characteristics of poly Si TFTs were improved. The I ON /I OFF of polySi TFT increased from 10 3 to 10 5. The hydrogenation time was also reduced.