制备过程中对VO_2薄膜热致相变光电性能的控制

Control the optical and electrical properties of VO_2 thin films during preparation process

本文利用真空还原V2 O5的方法制备出优质对VO2 薄膜 ;研究了不同真空还原时间VO2 薄膜热致相变过程中光电性能的影响 ;利用XPS、XRD对薄膜的化学状态和结晶状态进行了研究。制备的薄膜高 /低温电阻变化最大达到三个数量级 ,90 0nm处的光学透过率在相变前后改变了 40 %左右 ,热致相变性能优良。讨论了不同的真空还原时间下VO2 薄膜热滞回线的宽度、相变温度点以及高低温光透射性能。最后给出了最佳真空还原时间。

Vanadium dioxide thin film were prepared by different annealing time and were characterized by using techniques of XRD、XPS、UV VIS and electrical measurements.The results show that before and after phase transition the resistance of VO 2 thin films change about 10 3 orders,the transmittance of 900nm light change 40%.The samples show good properties during phase transition.The effects of annealing time on temperature variation range and light transmittance ability before and after phase transition and phase transition point have been discussed.The best reasonable annealing time has been get.