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黄铜矿异质结的掺杂

Doping of Chalcopyrite Heterogeneous Structure
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摘要 在传统黄铜矿结构太阳能电池的物理模型的基础上,加入新的模型计算非辐射复合对电池性能的影响.分别模拟计算高迁移率和低迁移率下,不同掺杂浓度对复合和电流密度的影响.研究表明在高迁移率下掺杂浓度与复合成正比,与电流密度成反比;在低迁移率下,掺杂浓度对复合无影响,与电流密度成正比. On the basis of the traditional chalcopyrite structure solar ceils model, a new model was added to calculate the non radiation recombination effect on cell performance. With high mobility and low mobility, the influence of different doping concentrations of compound and current density were simulated respectively. Re- search showed that in the high mobility the doping concentration was proportional to the recombination and in- versely proportional to the current density; in low mobility the doping concentration had no effect on the recombi- nation, and was proportional to the current density.
出处 《佳木斯大学学报(自然科学版)》 CAS 2013年第2期237-241,共5页 Journal of Jiamusi University:Natural Science Edition
基金 黑龙江省教育厅科学技术研究项目(12523033)
关键词 黄铜矿结构 太阳能电池 非辐射复合 chalcopyrite structure solar cell non radiation recombination
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参考文献3

  • 1William Shockley, Hans J. Queisser. L Appl. Phys. 32 (1961).
  • 2Susanne Siebentritt. Solar Energy Materials & Solar Cells 95 (2011) 1471 - 1476.
  • 3U. Rau, H.W. Schock. Applied Physics A. 69, (1999) 131 - 147.

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