摘要
介绍了BGO(Bi4Ge3O12)闪烁晶体的发光原理,简述了国内外某些针对BGO闪烁晶体的辐照实验.分析了晶体受到辐照前后透射率、相对光输出及吸收系数的变化.分析表明:BGO闪烁晶体辐照损伤的主要因素是形成俘获色心,通过退火及光子照射可以使闪烁晶体的性能得到一定的恢复.简要介绍了提高BGO闪烁晶体耐辐照性能的方法,并指出通过掺杂及改变晶体生长方法是提高晶体耐辐照性能最重要的方法.
This paper introduced the light-emitting tion crystals, and irradiation experiments at home principle of BGO （ Bi4Ge3 O12 ） scintilla- and abroad. It analyzed the change about the irradiated transmission rate, relative light output and absorption coefficient before and after irradiated. Analysis showed that the main factor of BGO scintillation crystals radiation damage was the capture color center, and could recover by annealing and photon radiation. It introduced the method of improving irradiation resistance of BGO and pointed out that doping and changing the crystal growth method tant method to improve the radiation resistance properties of crystals. scintillation crystal, were the most important method to improve the radiation resistance properties of crystals.
出处
《南华大学学报（自然科学版）》
2013年第1期1-6,共6页
Journal of University of South China：Science and Technology
基金
湖南省科技重大专项基金资助项目(10ZDA02)
