期刊文献+

太赫兹源场致发射电子源 被引量:4

Field emission electron source for terahertz source application
下载PDF
导出
摘要 通过粒子模拟(PIC)软件模拟计算了在ps级别下二极与三极结构碳纳米管场致发射的电流密度与电子注聚焦性能。阳极电压在2kV时,二极结构下电流密度达到1.85A/cm2;三极结构下,栅压700V时发射电流密度达到2.3A/cm2,且在一定的三极结构参数与电极电压下,可以获得较好的电子注聚束效果。通过碳纳米管二极管发射实验,获得了6.6A/cm2的发射电流密度,总发射电流达到52.1mA,可以为太赫兹器件提供连续发射的电子注。 Field emission from carbon nanotube (CNT) has been simulated by a particle-in-cell (PIC) software at pico-second level. The emission current, current density and focus character of a CNT cathode have been discussed. In a diode configuration, the emission current from cathode reaches 1.85 A/cm2 when the anode voltage is 2 kV. While in a triode configuration, the current reaches 2.3 A/cm2 for a gate voltage of 700 V, and the focus performance of electron beam can be optimized by modifying triode parameters and voltage applied to the electrodes. A diode structure with CNT cathode has been fabricated to verify large-current field emission, a total emission current of 52.1 mA and a current density of 6.6 A/cm2 have been obtained from this diode. It proved that field emission cathode can be applied in terahertz source devices.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2013年第6期1494-1498,共5页 High Power Laser and Particle Beams
基金 国家自然科学基金项目(51120125001 60971017 61101023) 江苏省高校自然科学基础研究项目(12KJB510004) 南京工程学院创新基金项目(CKJ2010013)
关键词 场致发射 电子束 太赫兹源 电流密度 field emission, electron beam, terahertz source, current density
  • 相关文献

参考文献9

二级参考文献86

  • 1刘盛纲.太赫兹科学技术的新发展[J].中国基础科学,2006,8(1):7-12. 被引量:193
  • 2周泽魁,张同军,张光新.太赫兹波科学与技术[J].自动化仪表,2006,27(3):1-6. 被引量:18
  • 3Jepsen P U,Jacobsen R H,Keiding S R.Generation and detection of terahertz pursers from biased semiconduction antennas[J].J.Opl.Soc.,1996,13(11):2424-2436.
  • 4Siegel P H.Terahertz technology[J].IEEE Trans.Microwave Theory Technol,2002,50:910.
  • 5D D Nolte.Semi-insulating semiconductor heterostructures:optoelectronic properties and applications[J].Journal of Applied Physics,1999,85(9):6259-6289.
  • 6Z Piao,Tani,K Sakai.Carrier dynamics and terahertz radiation in photoconductive antennas[J].Japanese Journal of Applied Physics,2000,39:96-100.
  • 7H Eisele,A Rydberg,G I Haddad.Recent advances in the performance of InP gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above[J].IEEE Transactions on Microwaves and Techniques,2000,48(4):626-630.
  • 8Z S Gribnikov,N Z Vagidov,V V Mitin,et al,Ballistic and quasiballistic tunnel transit time oscillators for the terahertz range:Linear admittance[J].Journal of Applied Physics,2003,93(9):435-5446.
  • 9E I Kolberg,J Stake,L Dillner.Heterostructure barrier varactors at submillimetre waves[J].Philosophical transactions of the royal society,1996,A354:2383-2398.
  • 10H Hartanagel.32 nd European Microwave Conference[C].Milano,Italy,2002:249-252.

共引文献73

同被引文献35

  • 1电子管设计手册编辑委员会.微波管磁路设计手册[M].北京:国防工业出版社,1981.
  • 2Hozumi Y, Ohsawa S, Sugimura T, et al. Development of field emission electron gun from carbon nanotubes eathode[C]//Proceedings of LINAC. 2004 : 1-3.
  • 3Berdinsky A S, Shaporin A V, Yoo J B, et ai. Field enhancement factor for an array of MWNTs in CNT paste[J]. Appl Phys A, 2006, 83 (3): 377-383.
  • 4Manohara H M, Toda R, Lin R H, et al. Carbon nanotube bundle array cold cathodes for THz vacuum tube sources[J]. J Infrared Milli Terahz Waves, 2009, 30(12) :1338-1350.
  • 5Jia-dong Li,Jie Xie,Wei Xue,Dong-min Wu.Fabrication of cantilever with self-sharpening nano-silicon-tip for AFM applications[J]. Microsystem Technologies . 2013 (2)
  • 6Bin Tang,Kazuo Sato,Miguel A. Gosálvez.Sharp silicon tips with different aspect ratios in wet etching/DRIE and surfactant-modified TMAH etching[J]. Sensors & Actuators: A. Physical . 2012
  • 7Jianqiang Han,Shaoyong Lu,Qing Li,Xiaolu Li,Jiangying Wang.Anisotropic wet etching silicon tips of small opening angle in KOH solution with the additions of I 2 /KI[J]. Sensors & Actuators: A. Physical . 2009 (1)
  • 8R.A. Morris,R.L. Martens,I. Zana,G.B. Thompson.Fabrication of high-aspect ratio Si pillars for atom probe ‘lift-out’ and field ionization tips[J]. Ultramicroscopy . 2008 (5)
  • 9G. Villanueva,J.A. Plaza,A. Sánchez,K. Zinoviev,F. Pérez-Murano,J. Bausells.DRIE based novel technique for AFM probes fabrication[J]. Microelectronic Engineering . 2007 (5)
  • 10D.P. Burt,P.S. Dobson,L. Donaldson,J.M.R. Weaver.A simple method for high yield fabrication of sharp silicon tips[J]. Microelectronic Engineering . 2007 (3)

引证文献4

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部