合成温度对Ce掺杂SiC纳米线的制备及场发射性能的影响研究

Effect of synthesis temperature on preparation and field emission property of Cedoped SiC nanowires

本文利用化学气相反应(CVR)法,系统研究了不同温度对Ce掺杂的SiC纳米线及其场发射性能的影响规律.利用扫描电镜(SEM)、透射电镜(TEM)、选区电子衍射(SAED)、X射线衍射(XRD)对所得产物进行了表征,并对其场发射性能进行了测试.结果表明:所得产物为具有立方结构的β-SiC晶体,随着温度的升高,纳米线逐渐变的弯曲,Ce的含量降低,产物的开启电场和阈值电场先升高后降低.当合成温度为1250C,Ce的含量为0.27at%,产物的场发射性能最佳,开启电场和阈值电场分别为2.5V/μm和5.2V/μm.

In this paper, Ce dopedSiC nanowires were prepared by chemical vapor reaction technique at the different synthesis temperatures, and the field emission （FE） properties of the nanowires were measured. The products were characterized by scanning electron microscope （SEM）, transmission electron microscope （TEM）, selected area electron diffraction （SAED） and X-ray diffraction （XRD）. The results suggested that the products were β-SiC, the nanowires become bending and the content of Ce reduces with increasing temperature; the values of the turn-on and threshold field increase at first and then decrease. When the synthesis temperature is 1250C, the content of Ce is 0.27 at%, the turn-on and threshold fields of the product are 2.5 V/μm and 5.2 V/μm.